GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP

GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP

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GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP
  • GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP
GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP

GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP

SKU: gan-single-crystal-substrate-n-type-10-10-5-x10-x-0-3-mm-1sp

Price: RFQ

Description

 GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self-supporting wafer thicknesses in a convenient time period.

Other Sapphire

GaN

 AlN template 

 ZnO

A-plane (11-20)

Diamond Scriber

Vacuum Pen

Wafer Containers

Film Coaters