Description
GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self-supporting wafer thicknesses in a convenient time period.
Specifications of Substrate
- Orientation: c-axis (0001) +/- 1.0 o
- Nominal Thickness: 250+/- 50 um
- Dimension: 50.8mm+/-1mm
- Bow: <5 microns
- TTV: <10 microns
- Conduction Type: N+ type
- Resistivity: < 0.05 Ohm-cm
- Dislocation Density: < 5x106cm-2
- Macro Defect Density: < 5 cm-2
- Transmission: => 70%
- Front Surface Finish: (Ga Face) , Epi-ready,RMS <1 nm
- Back surface finish: N-face Epi-ready,RMS <1 nm
- Edge Exclusion Area: 1 mm
- Carrier Concentration: >5E17/c.c
- Package Single Wafer: Container or membrane box
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