GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3

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GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3
  • GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3
GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3

SKU: gaas-wafer-growing-method-vgf-100-zn-doped-p-type-2x0-5-mm-1sp-5-17-9-38-x-10-17-cm-3

Price: RFQ

Description

 GaAs single crystal wafer Growing Method: VGF Orientation:                    (100) Size:                             2" dia x 0.5mm Polishing:                      one side polished Doping:                          Zn doped Conductor type: S-C-P Carrier Concentration:      (5.17-9.38) x 10^17 /cm^3 Mobility: 1                       168-188 cm^2/V.S EPD:                              <5000/cm^2 Resistivity:                      (3.96-6.67)x10^-2 ohm.cm Ra(Average Roughness) : < 0.4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces