GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP
  • GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

SKU: gaas-wafer-growing-method-vgf-100-undoped-semi-insulated-3d-x0-5-mm-1sp

Price: RFQ

Description

 GaAs single crystal wafer Growing Method:               VGF Orientation:                      (100) Size:                                3" dia x 0.5mm Polishing:                          one side polished Doping:                             undoped Conductor type:                Semi-Insulating Resistivity:                        (1.35-4.21)x10^8Ohm.cm Mobility:                           4360-5640cm^2/V.S EPD:                                <5000cm^-2 Primary Flat:                    EJ(0-1-1) Secondary Flat:                EJ(0-11) Ra(Average Roughness) :   < 0.4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces