Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 3" dia x 0.5mm
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Polishing: one side polished
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Doping: undoped
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Conductor type: Semi-Insulating
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Resistivity: (1.35-4.21)x10^8Ohm.cm
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Mobility: 4360-5640cm^2/V.S
- EPD: <5000cm^-2
- Primary Flat: EJ(0-1-1)
- Secondary Flat: EJ(0-11)
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Ra(Average Roughness) : < 0.4 nm