GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

RM0.00 MYR
Sale price  RM0.00 MYR Regular price 
Skip to product information
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

SKU: gaas-wafer-growing-method-vgf-100-undoped-semi-insulated-3d-x0-5-mm-1sp

Price: RFQ

Description

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)
  • Size: 3" dia x 0.5mm
  • Polishing: one side polished
  • Doping: undoped
  • Conductor type: Semi-Insulating
  • Resistivity: (1.35-4.21)x10^8Ohm.cm
  • Mobility: 4360-5640cm^2/V.S
  • EPD: <5000cm^-2
  • Primary Flat: EJ(0-1-1)
  • Secondary Flat: EJ(0-11)
  • Ra(Average Roughness) : < 0.4 nm