Description
- GaAs single crystal wafer
-
Growing Method: VGF
- Orientation: (110)
- Size: 2" dia x 0.5mm
- Polishing: two sides polished
- Doping: undoped,
- Conductor type: SI (Semi-insulating )
- Carrier Concentration: N/A
- Mobility: 3710-6230 cm^2/V.S
- EPD: N/A
- Resistivity: (0.8-4.8)E8 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
