GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp
  • GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp
GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

SKU: gaas-vgf-grown-110-ori-n-type-si-doped-10x10x0-3mm-2sp

Price: RFQ

Description

 GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10 x 10 x 0.3-0.35 mm Polishing: Two  sides polished Doping: Si-doped Conductor type: S-C-N Carrier Concentration:(2.49-3.27)x10^18/c.c Mobility:  1630- 1870cm^2/V.S Resistivity :( 1.17-1.4)x10^-3 ohm.cm Ra(Average Roughness) : < 0.4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces