GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp

GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp
  • GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp
GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp

GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp

SKU: gaas-vgf-grown-110-ori-n-type-si-doped-10-x-5-x-0-3-mm-2sp

Price: RFQ

Description

 GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10 x 5 x 0.35 mm Polishing: Two  sides polished Doping: Si-doped Conductor type: S-C-N Carrier Concentration: (2.4-3.27)x10E18/cm^3 Mobility:  1630-1870 cm^2/V.S Resistivity :( 1.17-1.4)x10^-3 ohm.cm Ra(Average Roughness) : < 0.4 nm Note:  EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces