GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5

GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5

RM0.00 MYR
Sale price  RM0.00 MYR Regular price 
Skip to product information
GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5

GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5

SKU: gaas-vgf-110-orientation-zn-doped-p-type-3-dia-x-0-5mm-2sp-gazne76d05c2us5

Price: RFQ

Description

GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 3" dia x 0.5mm Polishing: Two  sides  polished Doping: Zn-doped Conductor type: P-type Carrier Concentration: (1.3-1.4)E19/cm^3 Mobility:  71-74 cm^2/V.S Ra(Average Roughness) : < 0.4 nm Resistivity : (6.1-6.6)x10^-3ohm.cm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


InSb

Other InAs

 InP 


GaSb

Wafer Box

Film Coater

RTP Furnaces