Description
- GaAs single crystal wafer
- Growing Method: LEC
- Orientation: (110)
- Size: 2" dia x 2.8 mm
- Polishing: As Cut
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: >1 x 107 Ohm.cm
- Mobility: 4500 cm 2/ V.S
- Carrier Concentration: <1 x108 cm^-3
- EPD: < 5x104/cm-2
