GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut

GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut

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GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut
  • GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut

GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut

SKU: gaas-lec-wafer-110-undoped-semi-insulated-2d-x-2-8-mm-as-cut

Price: RFQ

Description

 GaAs single crystal wafer Growing Method:            LEC Orientation:                   (110) Size:                             2" dia x 2.8 mm Polishing:                      As Cut Doping:                         undoped Conductor type:             Semi-Insulating Resistivity:                     >1 x 10 7 Ohm.cm Mobility:                        4500 cm 2 / V.S Carrire Concentration:    <1 x10 8 cm ^-3 EPD:                           < 5x 10 4 /cm -2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces