GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

RM0.00 MYR

GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

Name: GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5
Brand: MTI
SKU: GASia76D0625C2US5
Availability: OutOfStock

SKU: gaas-growing-method-vgf100-si-doped-n-type-3-dia-x-0-625mm-2sp-carrier-concentration-1-4-3-96-x-10-18-cm-3-gasia76d0625c2us5

Price: RFQ

Description

GaAs single crystal wafer Growing Method: VGF Orientation: (100)+/- 0.5 degree Size: 3" dia x 0.625mm Polishing: two sides polished Doping: Si doped Conductor type: S-C-N Carrier Concentration: (1.06-3.96) x 10^18/cm^3 Mobility: 1420-2480 cm^2/V.S Resistivity: (1.1-2.38) E-3 ohm.cm EPD: <1000cm^2 Ra(Average Roughness) : < 0.4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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