GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3

GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3

RM0.00 MYR
RM0.00 MYR
Skip to product information
GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
  • GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3

GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3

SKU: gaas-growing-method-vgf100-si-doped-n-type-2-dia-x-0-5mm-2sp-carrier-concentration-3-8-6-2-x-10-16-cm-3

Price: RFQ

Description
  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)
  • Size: 2" dia x 0.5mm
  • Polishing: two  sides  polished
  • Doping: Si doped
  • Conductor type: S-C-N
  • Carrier Concentration: (3.8-6.4) x 10^16 /cm^3
  • Mobility: (3450-4150) cm^2/V.S
  • Resistivity: (2.74-4.24) E-2  ohm.cm
  • EPD: < 5000cm^2
  • Ra(Average Roughness): < 0.4 nm
  • EPI ready surface and packing


Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coaters

 RTP Furnaces