Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 10x10 x 0.6mm
- Polishing: one side polished;
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.6-1.1)E8 Ohm.cm
- Mobility: 5870-6120 cm^2/v.s.
- EPD: <5000/cm2
