GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP

RM0.00 MYR
Sale price  RM0.00 MYR Regular price 
Skip to product information
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP

SKU: gaas-growing-method-vgf-100-undoped-semi-insulated-10x10-x0-5-mm-1sp

Price: RFQ

Description

GaAs single crystal wafer Growing Method: VGF Orientation:                       (100) Size:                                10x10 x 0.5mm Polishing:                          one side polished; Ra(Average Roughness) :  < 0.4 nm Doping:                             undoped Conductor type:                 Semi-Insulating Resistivity:                        (0.65-3.24) E8 Ohm.cm Mobility:                           4700-5630cm^2/v.s. EPD:                               <5000 /cm 2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


InSb

Other InAs

 InP 


GaSb

Wafer Box

Film Coater

RTP Furnaces