GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3
  • GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

SKU: gaas-growing-method-vgf-100-si-doped-n-type-2-dia-x-0-35mm-1sp-cc-1-65-3-92-x-10-18-cm-3

Price: RFQ

Description

 GaAs single crystal wafer Growing Method: VGF Orientation:                               (100) Size:                                         2" dia x 0.35mm Polishing:                                  One side polished Doping:                                     Si doped Conductor type:                         N-type Carrier Concentration:                 (1.65 - 3.92) x 10^18 /cm^3 Mobility:                                    1440 - 2270 cm^2/V.S Resistivity:                                (1.01 - 1.90) E-3  ohm.cm EPD:                                        < 500 cm^2 Ra(Average Roughness) :           < 0.4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


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 		Other InAs

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 Film Coater

 RTP Furnaces