Description
- GaAs single crystal wafer
- Growing Method:
- Orientation: (110)
- Flat:PF<110>, SF <100>
- Size: 5x5x5.5-5.6mm
- Polishing: Two sides polished
- Doping: un-doped
- Conductor type: S-I
- Mobility: 4800 cm^2/V.S
- Resistivity :(1-9)x10^17 ohm.cm
- Carrier Concentration: 1.3x10^7 cm^-3
- EPD:1x10^4 cm^-2
- Ra(Average Roughness) : < 5 Angstrom (RMS)
