GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US
  • GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

SKU: gaas-100-orientation-2-deg-off-toward-101-0-5-deg-te-doped-n-type-2-dia-x-0-5mm-1sp-prime-grade-gatea50d05c1deg2us

Price: RFQ

Description

 GaAs single crystal wafer, PRIME Grade Growing Method:           VGF Orientation:                   (100) 2 degree OFF Toward [101] +/- 0.5 deg Size:                              2" dia x 0.5mm Polishing:                       One  side polished Doping:                          Te doped Conductor type:               N-type Carrier Concentration:      (0.15-2.6) E18 /cm^3 Mobility:                         2700~3600 cm^2/V.S Resistivity:                      9E-4~1.1E-2 ohm-cm EPD:                              <8000/cm^2 Note:                              EPI polishing: RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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