GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US
  • GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

SKU: gaas-100-orientation-2-deg-off-toward-101-0-5-deg-te-doped-n-type-2-dia-x-0-485mm-1sp-prime-grade-gatea50d0485c1deg2us

Price: RFQ

Description

 GaAs single crystal wafer, PRIME Grade Growing Method:          VGF Orientation:                  (100) 2 degree OFF Toward [101] +/- 0.5 deg Size:                            2" dia x 0.485mm Polishing:                     One  side polished Doping:                        Te doped Conductor type:            N-type Carrier Concentration:    (0.1-0.6) x 10^18 /cm^3 Mobility:                       3500-3600 cm^2/V.S Resistivity:                    (2.9-10.7) E-3 ohm-cm EPD:                            <8000/cm^2 Note:                            EPI polishing: RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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