Description
Substrate
|
Crystal Structure |
Tetragonal ( 4m) : 9oC < T < 130.5 oC a=3.99 ?, c= 4.04 ? , |
|
Growth Method |
Top Seeded Solution Growth |
|
Melting Point |
1600 oC |
|
Density |
6.02 g/cm3 |
|
Dielectric constants |
ea = 3700, ec = 135 (unclamped) ea = 2400, e c = 60 (clamped) |
|
Index of Refraction
|
515 nm 633 nm 800 nm no 2.4921 2.4160 2.3681 ne 2.4247 2.3630 2.3235 |
|
Transmission wavelength |
0.45 ~ 6.30 mm |
|
Electro Optic Coefficients: |
rT 13 = 11.7 ?1.9 pm/V rT 33 =112 ?10 pm/V rT 42= 1920 ?180 pm/V |
|
Reflectivity of SPPC ( at 0 deg. cut ) |
50 - 70 % ( max. 77% ) for l = 515 nm 50 - 80 % ( max: 86.8%) for l = 633 nm |
|
Two-wave mixing coupling constant: |
10 -40 cm-1 |
|
Absorption loss: |
l: 515 nm 633 nm 800 nm a: 3.392cm-1 0.268cm-1 0.005cm-1 |