Description
99.996% High Purity, Monocrystalline Al2O3
- Sapphire ( single crystal of Al 2 O 3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films.
- Orientation: C-axis[0001] ( +-0.5 o ) with Standard Flat
- Orientation: C-axis[0001] +-0.5 o
- Diameter: 100mm +/- 0.1mm
- Thickness: 500um +/- 25 um
- Major Flat: A-axis[11-20]+/-0.5 o
- Major Flat Length: 32.5mm +/- 1.5mm
- Surface Finish: Two sides polished
- TTV: <= 25um
- Package: Each wafer is packed in 1000 class clean room .
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm 2
- Growth Technique: CZ
- Crystal purity: 99.996%
- Hardness: 9 ( mohs)
- Thermal Expansion : 7.5x10 -6 ( / o C)
- Thermal Conductivity : 46.06 @ 0 o C 25.12 @ 100 o C, 12.56 @ 400 o C ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10 -5 at A axis , <5 x10 -5 at C axis