Description
Features:
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Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Orientation: C-plane off 0.35+/- 0.05o to M-plane leftwards from the Primary; 0 +/- 0.1o off to A-plane
- Diameter: 100mm
- Thickness: 0.9+/-0.025mm
- Major Flat: A-axis[11-20]+/-0.3o
- Major Flat Length: 32.5mm +/- 1.5mm
- Surface Finish:Front side: Epi- polished Ra=0.3 nm(by AFM); Back side: fine ground (Ra:1.2 um)
- TTV: = 20um, BOW=25um
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Package: Each wafer is packed in 1000 class clean room
Typical Properties:
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Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
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Melting Point: 2040 degree C
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Density: 3.97 gram/cm2
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Growth Technique: CZ
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Crystal Purity: >99.99%
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Hardness: 9 ( mohs)
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Thermal Expansion: 7.5x10-6 (/ oC)
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Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
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Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
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Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis