Description
Features:
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Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
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Wafer size: 10 mm x 10 mm x 0.5 mm thick
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Orientation tolerance: <1-102> +/-0.5 o
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Polished surface: Substrate surface is EPI polished via a special CMP procedure with RA < 5 A
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1 side polished
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Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~~ 9.4 @300K at A axis ~~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail data
Please Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
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| Other Al2O3 | AlN template | Wafer Carriers | Plasma Cleaners | Film Coater |
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