Description
Features:
- Monocrystalline Sapphire Wafer
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Purity> =99.995%
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Wafer size: 100 mm dia x 0.525 mm+/-25um thickness
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Orientation: R-plane (1102) +/- 0.2 deg
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Orientation Flat: 31 +/- 2.5 mm
- Primary Flat Location: Projected C-Axis 45 +/- 2 degree
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Surface Roughness: Ra <= 3 Angstrom
- Two sides polished
- Edge Chamfering: Ground with 45 degree chamfering
- Bow: <= 20um
- Laser Mark: none
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
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Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care
Typical Properties:
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Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
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Melting Point: 2040 degree C
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Density: 3.97 gram/cm2
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Growth Technique: CZ
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Crystal Purity: >99.99%
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Hardness: 9 ( mohs)
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Thermal Expansion: 7.5x10-6 (/ oC)
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Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
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Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
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Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis