Description
Features:
- A plane (11-20) sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
- Wafer size: 1" dia x 0.4 - 0.5 mm thickness
- Orientaion: A plane <11-20> orn . +/-0.5 Deg
- Polished surface : Wafer surface is EPI polished via a special CMP procedure
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm 2
- Growth Technique: CZ
- Crystal purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion : 7.5x10 -6 ( / o C)
- Thermal Conductivity : 46.06 @ 0 o C 25.12 @ 100 o C, 12.56 @ 400 o C ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10 -5 at A axis , <5 x10 -5 at C axis