Description
- Sapphire ( single crystal of Al 2 O 3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films.
- Wafer size: 2" dia x 0.5 mm thickness
- (0001) C plane orientation (+/-0.5 Deg) with Standard Flat
- Polished surface : Wafer surface is EPI polished via a special CMP procedure. Price listed here is for one side polished, Please choose two side for extra $20 cost.
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm 2
- Growth Technique: CZ
- Crystal purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion : 7.5x10 -6 ( / o C)
- Thermal Conductivity : 46.06 @ 0 o C 25.12 @ 100 o C, 12.56 @ 400 o C ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10 -5 at A axis , <5 x10 -5 at C axis