Description
MIST-1600-6 is a MIST/LPCVD system designed for the epitaxial growth of thin films on various substrates up to 1600°C heated by induction. It features an induction-heated graphite substrate holder with precise PID control. The boron nitride (BN) shower head enables a uniform deposition of precursors on a substrate at an elevated temperature. The system also comes with a hermetic quartz chamber for LPCVD without worries of precursor leaks. It is a unique tool for high-temperature thin film growth, especially for next-generation semiconductors, such as Ga2O3 and BN.
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