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100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type ,B-doped 100 mm dia .x0.525mm thick, 1sp,R:0.001-0.005 ohm.cm - FmSi3N4onSiBa100D0525C1FT100
  • 100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type ,B-doped 100 mm dia .x0.525mm thick, 1sp,R:0.001-0.005 ohm.cm - FmSi3N4onSiBa100D0525C1FT100
100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type ,B-doped 100 mm dia .x0.525mm thick, 1sp,R:0.001-0.005 ohm.cm - FmSi3N4onSiBa100D0525C1FT100

100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type ,B-doped 100 mm dia .x0.525mm thick, 1sp,R:0.001-0.005 ohm.cm - FmSi3N4onSiBa100D0525C1FT100

SKU: 100-nm-silicon-nitride-film-pe-cvd-on-si100p-type-b-doped-100-mm-dia-x0-525mm-thick-1sp-r-0-001-0-005-ohm-cm-fmsi3n4onsiba100d0525c1ft100

Price: RFQ

Description

 Silicon Nitride Film Si3N4 Film coated by low stress PE-CVD method Si3N4 Thickness:   100nm +/- 8% Si3N4 covers front polished side of Silicon wafer ONLY Refractive Index of Si3N3: 1.98 +/-0.05 @ 632.8nm Silicon Wafer

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