Description
Silicon Nitride Film
- Si3N4 Film coated by low stress PE-CVD method
- Si3N4 Thickness: 100nm +/- 8%
- Si3N4 covers front polished side of Silicon wafer ONLY
- Refractive Index of Si3N3: 1.98 +/-0.05 @ 632.8nm
Silicon Wafer Specifications
- Conductive type: Si P- type, B-doped
- Resistivity: 0.001-0.005 ohm-cm
- Size: 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm th
- Orientation: (100) +/- 0.5o
- Polish: One side polished
- Surface roughness: Prime
- Packing: Vacuum packed on a 4" single wafer carrier box
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Optional: you may need tool below to handle the wafer ( click picture to order )
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Diamond Scriber for Cutting Single Crystal Substrate - DS-01 |
Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001 |
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